150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes 150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-252 150N03GSL TO-251 150N03DSL Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage .
ff Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA Drain-Source On-State Resistance RDS(on) VGS=10V,ID=20A VGS=4.5V,ID=20A Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHZ Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) VDD=20.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 150N03 |
Cmos |
N-Channel MOSFET | |
2 | 150N03GSL |
PINGWEI |
N-Channel MOSFET | |
3 | 150N06 |
ROHM |
Nch 60V 15A Power MOSFET | |
4 | 150N10 |
IXYS |
Power MOSFETs | |
5 | 150N10 |
IXYS Corporation |
IXFN150N10 | |
6 | 150N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 150NS |
Naina Semiconductor |
Standard Recovery Diodes | |
8 | 150NS10 |
Naina Semiconductor |
Standard Recovery Diodes | |
9 | 150NS100 |
Naina Semiconductor |
Standard Recovery Diodes | |
10 | 150NS120 |
Naina Semiconductor |
Standard Recovery Diodes | |
11 | 150NS140 |
Naina Semiconductor |
Standard Recovery Diodes | |
12 | 150NS160 |
Naina Semiconductor |
Standard Recovery Diodes |