These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Order codes STF14NM50.
3 2 1
TO-220FP
TAB
TAB
I2PAK 1 2 3
TO-220
3 2
1
Figure 1. Internal schematic diagram
'7$%
* 6
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Order codes
STF14NM50N STI14NM50N STP14NM50N
VDS @ TJmax
RDS(on) max
ID
550 V
0.32 Ω 12 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 14NM65N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | 14N03L |
Infineon Technologies |
IPD14N03L | |
3 | 14N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
4 | 14N05L |
Fairchild Semiconductor |
RFD14N05L | |
5 | 14N101K |
RFE |
Metal Oxide Varistor 14mm Dusc | |
6 | 14N101K |
HUAAN |
Metal Oxide Varistor | |
7 | 14N102K |
RFE |
Metal Oxide Varistor 14mm Dusc | |
8 | 14N102K |
HUAAN |
Metal Oxide Varistor | |
9 | 14N112K |
RFE |
Metal Oxide Varistor 14mm Dusc | |
10 | 14N112K |
HUAAN |
Metal Oxide Varistor | |
11 | 14N121K |
RFE |
Metal Oxide Varistor 14mm Dusc | |
12 | 14N121K |
HUAAN |
Metal Oxide Varistor |