A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameters IO @ TC IFSM 2 130MT.KB 160MT.KB 130 (160) 85 (62) 1130 1180 6400 5800 64000 160 (200) 85 (60) 1430 1500 10200 9300 102000 .
Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio, outline for easy connections to power transistor and IGBT modules 4000 VRMS isolating voltage UL E78996 approved 130 A 160 A Description A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 130MT |
International Rectifier |
THREE PHASE BRIDGE | |
2 | 130MT100KB |
International Rectifier |
THREE PHASE BRIDGE | |
3 | 130MT120KB |
International Rectifier |
THREE PHASE BRIDGE | |
4 | 130MT140KB |
International Rectifier |
THREE PHASE BRIDGE | |
5 | 130MT160KB |
International Rectifier |
THREE PHASE BRIDGE | |
6 | 130MDS |
Naina Semiconductor |
Three Phase Bridge Rectifier | |
7 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
8 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
9 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor | |
10 | 13001-2 |
Jingdao |
NPN power transistor | |
11 | 13001-A |
Jingdao |
NPN power transistor | |
12 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors |