12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-S.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 12N60 |
nELL |
N-Channel Power MOSFET | |
2 | 12N60 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
3 | 12N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
4 | 12N60 |
UTC |
N-CHANNEL MOSFET | |
5 | 12N60 |
GFD |
600V N-Channel MOSFET | |
6 | 12N60-C |
UTC |
N-CHANNEL MOSFET | |
7 | 12N60A |
nELL |
N-Channel Power MOSFET | |
8 | 12N60AF |
nELL |
N-Channel Power MOSFET | |
9 | 12N60C |
IXYS |
IGBT | |
10 | 12N60C3D |
Fairchild Semiconductor |
HGTG12N60C3D | |
11 | 12N60CD1 |
IXYS |
IGBT | |
12 | 12N60F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |