12N50C - Vishay

12N50C Power MOSFET

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 48 12 15 Single TO-220AB TO-220 FULLPAK 0.555 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Di.

Features

• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP12N50C-E3 D2PAK (TO-263) SiHB12N50C-E3 TO-220 FULLPAK SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) LIMIT PARAMETER TO220-AB SYMBOL D2PAK (TO-263) TO-220 FULLPAK Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc VGS at 10 V TC = 25 °C TC = 100 °C .