12M2H008 - Infineon

12M2H008 1200V SiC MOSFET

Pin definition: • Pin 1 - Gate • Pin 2 - Kelvin sense contact • Pin 3…7 - Source • Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R008M2H Package PG-TO263-7-U01 Marking 12M2H008 Datasheet www.infineon.com Please read the sections "Important notice" and "Wa.

Features

• VDSS = 1200 V at Tvj = 25°C
• IDDC = 144 A at TC = 100°C
• RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload operation up to Tvj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted
• Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Copyright © Infineon Technologies A.