100NTD - Naina Semiconductor

100NTD Thyristor-Diode

Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forwar.

Features

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• Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 100 220 2000 20 Units A A A kA s 2 M1 & M2 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Pa.