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www.DataSheet.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb fr.
• RDS(ON), VGS@10V,IDS@30A=9mΩ
• RDS(ON), [email protected],IDS@30A=12mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-202,Method 208
• Marking : 09N03
Drain
Gate Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o .
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| 1 | 09N03LA |
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| 2 | 09N05 |
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| 4 | 09N70P |
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AP09N70P |
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| 5 | 09N90E |
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FMH09N90E |
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More than just a frequency inverter - Leading technique |
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Coilcraft |
Square Air Core Inductors |
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| 9 | 0909ND |
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| 10 | 0909NS |
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