and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
j , Tstg Value 80 80 320 60 16 6 ±20 167 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-01-17 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) IPP05N03L IPB05N03L Symbol Values Unit min. typ. max. RthJC RthJA - 0.6 0.9 K/W - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID=100µA Z.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 05N03LAG |
Infineon Technologies |
IPU05N03LAG | |
2 | 05N03LS5 |
Infineon |
MOSFET | |
3 | 05N30 |
UTC |
300V N-CHANNEL POWER MOSFET | |
4 | 05N45 |
UTC |
N-CHANNEL POWER MOSFET | |
5 | 05N60-CB |
UTC |
N-CHANNEL POWER MOSFET | |
6 | 05N65-TA |
UTC |
N-CHANNEL MOSFET | |
7 | 05NH45 |
Toshiba |
Super Fast Recovery Rectifiers | |
8 | 05NH46 |
Toshiba |
Super Fast Recovery Rectifiers | |
9 | 05NL70 |
UTC |
N-CHANNEL POWER MOSFET | |
10 | 05NM60 |
UTC |
N-CHANNEL MOSFET | |
11 | 05NU41 |
EIC |
FAST RECOVERY RECTIFIER | |
12 | 05NU41 |
Toshiba |
Super Fast Recovery Rectifiers |