NP3007DR mosfet equivalent, 30v p-channel enhancement mode mosfet.
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* VDS =-30V,ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired.
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General Features
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* VDS =-30V,ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V
* Hig.
Schematic diagram
The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
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General Fea.
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