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V40100PGW |
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| Part Number | V40100PGW |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V40100PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS® FEATURES • Trench MOS Schottky technology • Lo... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 70 mH VF at IF = 20 A TJ max. Package 2 x 20 A 100 V 250 A 250 mJ 0.67 V 150 °C TO-3PW Diode v... |
| Document |
 V40100PGW Data Sheet
PDF 82.27KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V40100PG |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 2 | V40100P |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V40100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
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