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FS50ASJ-03F |
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| Part Number | FS50ASJ-03F |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) :... |
| Features |
• Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — ... |
| Document |
 FS50ASJ-03F Data Sheet
PDF 96.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FS50ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 2 | FS50AS-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 3 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS |
|
| 4 | FS500R17OE4D |
Infineon |
IGBT |
|
| 5 | FS500R17OE4DP |
Infineon |
IGBT |
|