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HFS4N90 |
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| Part Number | HFS4N90 |
| Manufacturer | SemiHow |
| Description | HFS4N90 March 2014 HFS4N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolog... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-220F
1 21 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note ... |
| Document |
 HFS4N90 Data Sheet
PDF 194.28KB |
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