1N5820 |
Part Number | 1N5820 |
Manufacturer | MotorolaInc |
Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. S... |
Features |
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1... |
Document |
1N5820 Data Sheet
PDF 168.51KB |
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1 | 1N5820 |
Kexin |
Schottky Diodes | |
2 | 1N5820 |
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3 | 1N5820 |
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Schottky Barrier Plastic Rectifier | |
4 | 1N5820 |
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3.0 Ampere Schottky Barrier Rectifiers | |
5 | 1N5820 |
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3 Amp Schottky Barrier Rectifier |