F21NM60N |
Part Number | F21NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of... |
Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB21NM60N
)STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N
650 V 650 V 650 V 650 V 650 V
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
17 A 17 A 17 A(1) 17 A 17 A
rod1. Limited by maximum temperature allowed
P ■ 100% avalanche tested te ■ Low input capacitance and gate charge le ■ Low gate input resistance bsoApplication - O ■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to t... |
Document |
F21NM60N Data Sheet
PDF 506.09KB |
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