RFPA2002 |
Part Number | RFPA2002 |
Manufacturer | RF Micro Devices |
Description | RFPA2002 RFPA2002 Integrated Power Amplifier 1750MHz to 2200MHz The RFPA2002 has over 28dB of small signal gain over 1750MHz to 2200MHz. When used with DPD at 3.3V, the RFPA2002 can deliver 24dBm LTE... |
Features |
■ POUT = 24dBm, 25% PAE, with 3.3V, 20MHz LTE DL, CFR 7.5dB ■ ACP <-50dBc with DPD ■ 28dB Gain over 1750MHz to 2200MHz ■ Instantaneous P3dB = 32dBm at 3.3V ■ Designed to Support Flexible VCC 0.5V to 4.5V for PAE Optimization ■ Envelope Tracking Compatible ■ Integrated Power Coupler ■ Integrated 50Ω Matching ■ Integrated Biasing ■ No External DC Block Needed ■ 3 Power Mode Operation ■ GPIO Interface ■ Ultra Small and Low Profile Applications ■ Power Amplifier, Power Amplifier Driver ■ Small Cell Base Stations ■ Wideband Instrumentation ■ Customer Premise Equipment ■ Data Cards RF Micro Devices... |
Document |
RFPA2002 Data Sheet
PDF 931.67KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFPA2005 |
RF Micro Devices |
Integrated Power Amplifier Module | |
2 | RFPA2013 |
RF Micro Devices |
GaAs HBT Power Amplifier | |
3 | RFPA2016 |
RF Micro Devices |
3-stage HBT power amplifier module | |
4 | RFPA2026 |
RF Micro Devices |
3-Stage Power Amplifier Module | |
5 | RFPA2089 |
RFMD |
InGaP HBT POWER AMPLIFIER |