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STD7ANM60N |
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| Part Number | STD7ANM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | * 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s stri... |
| Features |
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2 3
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Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N STD7ANM60N
650 V
0.9 Ω
5A
• Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description * 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the wo... |
| Document |
 STD7ANM60N Data Sheet
PDF 712.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD7ANM60N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STD70 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 3 | STD70GK08 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 4 | STD70GK12 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 5 | STD70GK14 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|