STB7ANM60N |
Part Number | STB7ANM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | * 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s stri... |
Features |
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Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N STD7ANM60N
650 V
0.9 Ω
5A
• Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram 'Ć7$% Applications • Switching applications Description * 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the wo... |
Document |
STB7ANM60N Data Sheet
PDF 720.93KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STB7ANM60N |
INCHANGE |
N-Channel MOSFET | |
2 | STB7001 |
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5 | STB70NF03L |
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