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SIRA10DP |
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| Part Number | SIRA10DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) 0.0037 at VGS = 10 V 0.0050 at VGS = 4.5 V ID (A) a, g 60 g 60 g Qg (TYP.) 15.... |
| Features |
• TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High power density DC/DC • Synchronous rectification • VRMs and embedded DC/DC G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Oper... |
| Document |
 SIRA10DP Data Sheet
PDF 393.75KB |
| Distributor | Stock | Price | Buy |
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