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CEU3100 |
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| Part Number | CEU3100 |
| Manufacturer | CET |
| Description | CED3100/CEU3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. Super high dense cell design for extremely ... |
| Features |
30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
51 204 46 0.36
Operating and Store Temperature... |
| Document |
 CEU3100 Data Sheet
PDF 406.02KB |
| Distributor | Stock | Price | Buy |
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