VFT10200C-E3 |
Part Number | VFT10200C-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® ITO-22... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT10200C PIN 1 K PIN 2 HEATSINK VIT10200... |
Document |
VFT10200C-E3 Data Sheet
PDF 154.89KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VFT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
3 | VFT1045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VFT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT1060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |