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NCE30H15K |
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| Part Number | NCE30H15K |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(... |
| Features |
● VDS =30V,ID =150A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Dev... |
| Document |
 NCE30H15K Data Sheet
PDF 428.57KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCE30H15 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE30H10 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE30H10G |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE30H10K |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE30H11G |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|