NCE3025G |
Part Number | NCE3025G |
Manufacturer | NCE Power Semiconductor |
Description | The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =25A RDS(ON... |
Features |
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! DFN 5x6 EP top view Package Marking and Ordering Information Device Marking Device Devic... |
Document |
NCE3025G Data Sheet
PDF 300.22KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE3025Q |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE3020Q |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE3007S |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
4 | NCE3008M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
5 | NCE3010S |
NCEPOWER |
N-Channel Enhancement Mode Power MOSFET |