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1N3766 |
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| Part Number | 1N3766 |
| Manufacturer | GeneSiC |
| Description | Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is ano... |
| Features |
• High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM... |
| Document |
 1N3766 Data Sheet
PDF 698.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3765 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |
|
| 2 | 1N3765 |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes |
|
| 3 | 1N3765 |
Microsemi |
Silicon Power Rectifier |
|
| 4 | 1N3765 |
Vishay |
Power Silicon Rectifier Diodes |
|
| 5 | 1N3765 |
America Semiconductor |
Silicon Standard Recovery Diode |
|