WFW9N70 |
Part Number | WFW9N70 |
Manufacturer | Wisdom technologies |
Description | This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ... |
Features |
■ RDS(on) (Max 1.2 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ TO-247... |
Document |
WFW9N70 Data Sheet
PDF 104.23KB |
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