2N6650 |
Part Number | 2N6650 |
Manufacturer | TAITRON |
Description | 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) ... |
Features |
• High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate ... |
Document |
2N6650 Data Sheet
PDF 335.98KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N665 |
Motorola |
PNP Transistor | |
2 | 2N6650 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR | |
3 | 2N6650 |
Central Semiconductor |
PNP silicon power darington transistor | |
4 | 2N6653 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N6653 |
SavantIC |
Silicon Power Transistor |