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Features
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84) IC=200mA (2N6385) IC=200mA, RBE=100Ω (2N6383) IC=200mA, RBE=100Ω (2N6384) IC=200mA, RBE=100Ω (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385)
40 60 80 40 60 80 40 60 80
MAX 300 3.0 1.0 10
UNITS μA mA mA mA V V V V V V V V V
R1 (28-August 2008)
CentralTM
Semiconductor Corp.
2N6383 2N6384 2N6385
NPN SILICON POWER DARLINGTON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) hFE hFE VF Cob |hhe| hhe
IC=5.0A, IB=10mA IC=10A, IB...
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2N6383 Data Sheet
