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1SS388 |
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| Part Number | 1SS388 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR =... |
| Features |
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Condition
IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0, f = 1MHz
Min T... |
| Document |
 1SS388 Data Sheet
PDF 375.37KB |
| Distributor | Stock | Price | Buy |
|---|
