Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
EPC1015 |
Click to view a larger image
| Part Number | EPC1015 |
| Manufacturer | EPC |
| Description | DATASHEET EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 4 mW ID , 33 A EPC1015 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard ... |
| Features |
)
BVDSS
Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage Gate-Source Reverse Leakage
VGS(TH) RDS(ON)
Gate Threshold Voltage Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 500 µA VDS = 32 V, VGS = 0 V
VGS = 5 V VGS = -5 V VDS = VGS, ID = 9 mA VGS = 5 V, ID = 33 A
Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge
VDS =... |
| Document |
 EPC1015 Data Sheet
PDF 317.75KB |
| Distributor | Stock | Price | Buy |
|---|
