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IRF7306QPBF |
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| Part Number | IRF7306QPBF |
| Manufacturer | International Rectifier |
| Description | These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET'... |
| Features |
of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
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VDSS = -30V RDS(on) = 0.... |
| Document |
 IRF7306QPBF Data Sheet
PDF 234.60KB |
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