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IRF7304QPBF |
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| Part Number | IRF7304QPBF |
| Manufacturer | International Rectifier |
| Description | These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's ar... |
| Features |
of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
HEXFET® Power MOSFET
1 8 D1 2 7 D1 3 6 D2 4 5 D2
Top View
VDSS = -20V RDS(... |
| Document |
 IRF7304QPBF Data Sheet
PDF 239.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7304 |
International Rectifier |
Generation V Technology |
|
| 2 | IRF7304PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF730 |
NXP |
PowerMOS transistor |
|
| 4 | IRF730 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | IRF730 |
Intersil Corporation |
N-Channel Power MOSFET |
|