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50N03 |
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| Part Number | 50N03 |
| Manufacturer | KIA |
| Description | KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage a... |
| Features |
Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A RDS(ON)=9.5mΩ(Max.),[email protected],Ids@30A 3. Pin configuration 50N03 Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 3 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 4. Maximum ratings and thermal characteristics Rating Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current1) Maximum p... |
| Document |
 50N03 Data Sheet
PDF 6.83MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 |
|
| 2 | 50N024 |
Vishay Siliconix |
SUD50N024 |
|
| 3 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A |
|
| 4 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P |
|
| 5 | 50N03 |
Tuofeng |
Power Transistor |
|