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K2507 |
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| Part Number | K2507 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK2507 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ... |
| Features |
istics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
4.17 62.5
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 272 µH, RG = 25 Ω, IAR = 25 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-02-06
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain cut−o... |
| Document |
 K2507 Data Sheet
PDF 263.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2500EH70 |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 2 | K2500GH |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 3 | K2500GHU |
Littelfuse |
High Energy Unidirectional SIDACs |
|
| 4 | K2500SH |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 5 | K2500SHU |
Littelfuse |
High Energy Unidirectional SIDACs |
|