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RJK1003DPN-E0 |
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| Part Number | RJK1003DPN-E0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0621EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channe... |
| Document |
 RJK1003DPN-E0 Data Sheet
PDF 77.55KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK1001DPN-E0 |
Renesas Technology |
N-Channel MOSFET |
|
| 2 | RJK1002DPN-E0 |
Renesas Technology |
N-Channel MOS FET |
|
| 3 | RJK1008DPE |
Renesas |
N-Channel Power MOSFET |
|
| 4 | RJK1008DPN |
Renesas |
N-Channel Power MOSFET |
|
| 5 | RJK1008DPP |
Renesas |
N-Channel Power MOSFET |
|