F540NS |
Part Number | F540NS |
Manufacturer | International Rectifier |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
e applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mount)**
www.irf.com
... |
Document |
F540NS Data Sheet
PDF 271.04KB |
Distributor | Stock | Price | Buy |
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1 | F546L |
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2 | F546LR |
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3 | F5-75R06KE3_B5 |
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4 | F5001 |
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RF POWER VDMOS TRANSISTOR | |
5 | F5001H |
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INTELIGENT POWER SWITCH |