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CEP540N |
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| Part Number | CEP540N |
| Manufacturer | CET |
| Description | CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and curren... |
| Features |
100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 36 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
140 0.91
Single Pulsed Avalanche Energy d... |
| Document |
 CEP540N Data Sheet
PDF 388.07KB |
| Distributor | Stock | Price | Buy |
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