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2SC5206 |
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| Part Number | 2SC5206 |
| Manufacturer | Hitachi |
| Description | 2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter ... |
| Features |
• High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 500 400 7 5 10 1.8 25 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min... |
| Document |
 2SC5206 Data Sheet
PDF 37.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors |
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| 5 | 2SC5200 |
ON Semiconductor |
NPN Transistor |
|