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FQD12N20LTM_F085 |
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| Part Number | FQD12N20LTM_F085 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct opration from logic drivers • Qualified to AEC Q101 • RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Avalanche Current (Note 1) (Note 1) dv/dt PD TJ, TSTG TL ... |
| Document |
 FQD12N20LTM_F085 Data Sheet
PDF 639.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD12N20L |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FQD12N20L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FQD12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 4 | FQD12N06 |
Oucan Semi |
60V N-Channel MOSFET |
|
| 5 | FQD12P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|