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L2SA812RLT1G |
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| Part Number | L2SA812RLT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVIC... |
| Features |
Storage Temperature
PD
R θJA Tj ,Tstg
200 2.4 417 -55 to +150
L2SA812*LT1
3 1
2 SOT-23
1 BASE
3 COLLECTOR
2 EMITTER
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
L2SA812-1/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www.DataSheet4U.com (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current (VCB=-50V)
Emitter Cutoff Current (VBE=-6V)
V(BR)CEO V(BR)EBO V(BR)CBO
-50 -6 -60
ICBO ... |
| Document |
 L2SA812RLT1G Data Sheet
PDF 181.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | L2SA812RLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L2SA812RLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SA812QLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L2SA812QLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SA812QLT3G |
Leshan Radio Company |
General Purpose Transistors |
|