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C4781 |
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| Part Number | C4781 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications 2SC4781 Unit: mm • High DC current gain and Excellent hFE linearity ... |
| Features |
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2006-11-10
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-... |
| Document |
 C4781 Data Sheet
PDF 98.13KB |
| Distributor | Stock | Price | Buy |
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