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2SC4003 |
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| Part Number | 2SC4003 |
| Manufacturer | LGE |
| Description | 2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 1 23 3. EMITTER Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted)... |
| Features |
High hFE
hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
TO-252-2L
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC PC TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
400 400
5 0.2 1 150 -55-150
V V V A W ℃ ℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10µA... |
| Document |
 2SC4003 Data Sheet
PDF 194.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 2 | 2SC4001 |
NEC |
Silicon NPN Transistor |
|
| 3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC4002 |
Sanyo Semicon Device |
Silicon NPN Transistor |
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| 5 | 2SC4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
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