HFS2N70S |
Part Number | HFS2N70S |
Manufacturer | SemiHow |
Description | HFS2N70S Dec 2009 HFS2N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 Ω ID = 1.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolog... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) ... |
Document |
HFS2N70S Data Sheet
PDF 872.74KB |
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