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HFS4N65 |
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| Part Number | HFS4N65 |
| Manufacturer | SemiHow |
| Description | HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6* A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note... |
| Document |
 HFS4N65 Data Sheet
PDF 813.23KB |
| Distributor | Stock | Price | Buy |
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