HFS2N65 |
Part Number | HFS2N65 |
Manufacturer | SemiHow |
Description | HFS2N65 July 2007 HFS2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) ... |
Document |
HFS2N65 Data Sheet
PDF 837.30KB |
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