HFS5N60S |
Part Number | HFS5N60S |
Manufacturer | SemiHow |
Description | HFS5N60S Aug 2007 HFS5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolog... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) ... |
Document |
HFS5N60S Data Sheet
PDF 204.51KB |
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