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HFS5N50S |
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| Part Number | HFS5N50S |
| Manufacturer | SemiHow |
| Description | HFS5N50S OCT 2008 HFS5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolog... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) ... |
| Document |
 HFS5N50S Data Sheet
PDF 799.10KB |
| Distributor | Stock | Price | Buy |
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