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K1365 |
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| Part Number | K1365 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward tr... |
| Features |
iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
1.39 °C / W 41.6 °C / W
Note 1: Ensur... |
| Document |
 K1365 Data Sheet
PDF 392.72KB |
| Distributor | Stock | Price | Buy |
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