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NCE30H10K |
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| Part Number | NCE30H10K |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(... |
| Features |
● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Pack... |
| Document |
 NCE30H10K Data Sheet
PDF 367.63KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCE30H10 |
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| 2 | NCE30H10G |
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| 3 | NCE30H11G |
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| 4 | NCE30H12 |
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| 5 | NCE30H12K |
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NCE N-Channel Enhancement Mode Power MOSFET |
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