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K3529-01 |
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| Part Number | K3529-01 |
| Manufacturer | Fuji |
| Description | 2SK3529-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline D... |
| Features |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Symbol VDS
Ratings 800
Unit V
VDSX *5
800 V
Continuous drain current
ID
±7 A
Pulsed drain current
ID(puls]
±28 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
7A
Maximum Avalanche Energ... |
| Document |
 K3529-01 Data Sheet
PDF 130.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K3520-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 2 | K3520PQ-XH |
KEC |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | K3524-01 |
Fuji Electric |
2SK3524-01 |
|
| 4 | K3525-01MR |
Fuji Electric |
2SK3525-01MR |
|
| 5 | K3528 |
Fuji Electric |
2SK3528 |
|