VS-6CWT10FN-E |
Part Number | VS-6CWT10FN-E |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode ... |
Features |
• 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACT... |
Document |
VS-6CWT10FN-E Data Sheet
PDF 149.52KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | VS-6CWT04FN |
Vishay |
High Performance Schottky Generation | |
2 | VS-6CWT04FN |
Vishay |
high performance Schottky diode | |
3 | VS-6CWH02FN-M3 |
Vishay |
Ultrafast Rectifier | |
4 | VS-6CWH02FNHM3 |
Vishay |
Ultrafast Rectifier | |
5 | VS-6CWQ03FNPbF |
Vishay |
Schottky Rectifier |